National Atomic Layer Etching Facility. This project aims to create Australia’s first and only facility for Atomic Layer Etching, which allows layer-by-layer removal of semiconductor materials with ex

Description

National Atomic Layer Etching Facility. This project aims to create Australia’s first and only facility for Atomic Layer Etching, which allows layer-by-layer removal of semiconductor materials with excellent etch depth control and uniformity, while the etched surface exhibits ultra-low surface damage and roughness. The etch and surface quality is crucial for advanced nanoscale electronic and photonic devices, as the surface is a significant fraction of nanoscale devices, severely affecting their properties. The diverse variety of applications supported by this facility will make it a nexus point between multiple disciplines, enabling research in quantum technology, broadband networks, sensing, materials science, and beyond, accelerating its adoption by Australian manufacturing.. Scheme: Linkage Infrastructure, Equipment and Facilities. Field: 4009 - Electronics, Sensors and Digital Hardware. Lead: Dr Andreas Boes